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PD - 97493A
IRFH6200PBF
HEXFET(R) Power MOSFET
VDS RDS(on) max
(@VGS = 4.5V)
20 1.20 1.50
V m m
RDS(on) max
(@VGS = 2.5V)
PQFN 5X6 mm
Applications
* Charge and discharge switch for battery application * Load switch for 12V (typical) bus
Features and Benefits
Features Low RDSon ( 1.20m) Low Thermal Resistance to PCB ( 0.5C/W) Low Profile ( 0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen Resulting Benefits Lower Conduction Losses Enable better thermal dissipation Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier
results in
Orderable part number IRFH6200TRPBF IRFH6200TR2PBF
Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm
Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400
Note
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC(Bottom) = 25C ID @ TC(Bottom) = 100C IDM PD @TA = 25C PD @TC(Bottom) = 25C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation
Max.
20 12 45 36 100 100 400 3.6 250 0.029 -55 to + 150
Units
V
A
g Power Dissipation g
c
W W/C C
Linear Derating Factor Operating Junction and
g
Storage Temperature Range
Notes through are on page 8
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1
09/7/2010
IRFH6200PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Single Pulse Avalanche Energy Avalanche Current
Min.
20 --- --- --- 0.5 --- --- --- --- --- 260 --- --- --- --- --- --- --- --- --- --- ---
Typ.
--- 6.4 0.80 1.10 0.8 -6.6 --- --- --- --- --- 155 22 53 1.3 14 74 140 160 10890 2890 2180
Max. Units
--- --- 1.20 1.50 1.1 --- 1.0 150 100 -100 --- 230 --- --- --- --- --- --- --- --- --- --- Typ. --- --- pF ns
Conditions
V VGS = 0V, ID = 250A mV/C Reference to 25C, ID = 1mA m VGS = 4.5V, ID = 50A VGS = 2.5V, ID = 50A
V VDS = VGS, ID = 150A mV/C A nA S nC VDS = 16V, VGS = 0V
e e
VDS = 16V, VGS = 0V, TJ = 125C VGS = 12V VGS = -12V VDS = 10V, ID = 50A VDS = 10V VGS = 4.5V ID = 50A (See Fig.17 & 18) VDD = 10V, VGS = 4.5V ID = 50A RG=1.0 See Fig.15 VGS = 0V VDS = 10V = 1.0MHz Max. 780 30 Units mJ A
Avalanche Characteristics
EAS IAR
d
Min.
--- --- --- --- ---
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Typ.
--- --- --- 86 350
Max. Units
100 A 400 1.2 130 525 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25C, IS = 50A, VGS = 0V TJ = 25C, IF = 50A, VDD = 10V di/dt = 260A/s
e
eA
Time is dominated by parasitic Inductance
Thermal Resistance
RJC (Bottom) RJC (Top) RJA RJA (<10s) Parameter Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient
f f
g g
Typ. --- --- --- ---
Max. 0.5 15 35 22
Units C/W
2
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IRFH6200PBF
1000
TOP VGS 10V 4.5V 3.5V 2.5V 2.0V 1.8V 1.5V 1.3V
1000
TOP VGS 10V 4.5V 3.5V 2.5V 2.0V 1.8V 1.5V 1.3V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
10 1.3V
1.3V
60s PULSE WIDTH
Tj = 25C 1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) 10 0.1 1
60s PULSE WIDTH
Tj = 150C 10 100
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance (Normalized)
Fig 2. Typical Output Characteristics
1.6 ID = 50A 1.4 VGS = 4.5V
ID, Drain-to-Source Current (A)
100 T J = 175C T J = 25C
1.2
1.0
10
0.8
1.0 0.5 1.0
VDS = 10V 60s PULSE WIDTH 1.5 2.0 2.5
0.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
Fig 4. Normalized On-Resistance vs. Temperature
14.0 ID= 50A
VGS, Gate-to-Source Voltage (V)
12.0 10.0 8.0 6.0 4.0 2.0 0.0
C, Capacitance (pF)
VDS= 16V VDS= 10V
Ciss 10000 Coss Crss
1000 1 10 VDS, Drain-to-Source Voltage (V) 100
0
100
200
300
400
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRFH6200PBF
1000
1000
OPERATION IN THIS AREA LIMITED BY R DS(on) 1msec
100
T J = 150C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100 10msec
100sec
10
T J = 25C
10 Tc = 25C Tj = 150C Single Pulse 1 0 1
VGS = 0V 1.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V)
DC
10
100
Fig 7. Typical Source-Drain Diode Forward Voltage
400
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
1.6
VGS(th) , Gate threshold Voltage (V)
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) ID = 150A ID = 500A ID = 1.0mA ID = 1.0A
ID, Drain Current (A)
300
Limited By Package
200
100
0 25 50 75 100 125 150 T C , Case Temperature (C)
Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature
1
Thermal Response ( Z thJC ) C/W
Fig 10. Threshold Voltage vs. Temperature
D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01
0.01
0.001
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1
0.0001 1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRFH6200PBF
RDS(on), Drain-to -Source On Resistance (m )
4 ID = 50A 3
3500
EAS , Single Pulse Avalanche Energy (mJ)
3000 2500 2000 1500 1000 500 0
ID TOP 19A 21A BOTTOM 30A
2 T J = 125C 1 T J = 25C 0 0 2 4 6 8 10 12
25
50
75
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (C)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
V(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
D.U.T
IAS tp
+ V - DD
A
I AS
0.01
Fig 14a. Unclamped Inductive Test Circuit
Fig 14b. Unclamped Inductive Waveforms
VDS VGS RG V10V GS
Pulse Width 1 s Duty Factor 0.1
RD
90%
D.U.T.
+
VDS
-VDD
10%
VGS
td(on) tr td(off) tf
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
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5
IRFH6200PBF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
Vds Vgs
Id
L
0
DUT 1K
S
VCC
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 17. Gate Charge Test Circuit
Fig 18. Gate Charge Waveform
6
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IRFH6200PBF
PQFN 5x6 Outline "B" Package Details
For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "B" Part Marking
INTERNATIONAL RECTIFIER LOGO
DATE CODE ASSEMBLY SITE CODE
(Per SCOP 200-002)
PIN 1 IDENTIFIER
XXXX XYWWX XXXXX
PART NUMBER
("4 or 5 digits")
MARKING CODE
(Per Marking Spec)
LOT CODE
(Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRFH6200PBF
PQFN 5x6 Outline "B" Tape and Reel
Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Indus trial (per JE DE C JE S D47F PQFN 5mm x 6mm

guidelines ) MS L1
(per JE DE C J-S T D-020D Yes
)

Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release.
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 1.7mH, RG = 25, IAS = 30A. Pulse width 400s; duty cycle 2%. R is measured at TJ of approximately 90C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/2010
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